application power switching features ?low on?esistance capable of 2.5 v gate drive low drive current high density mounting ordering information hitachi code fp?d eiaj code sc?27?a jedec code table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss ?0 v drain current i d ?.5 a drain peak current i d(pulse) * ?4 a body?rain diode reverse drain current i dr ?.5 a channel dissipation pch** 1.0 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** when using the glass epoxy board (40 x 40 x 1.6 mm) sop? 1 2 3 4 5 6 7 8 1, 2, 3 source 4 gate 5, 6, 7, 8 drain g d sss d dd 56 78 4 12 3 HAT1005F silicon p channel power mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss ?0 v i d = ?0 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss ?0 ? v ds = ?0 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.5 ?.5 v v ds = ?0 v, i d = ? ma static drain to source on state r ds(on) 0.07 0.09 ? i d = ? a resistance v gs = ?0 v * 0.095 0.13 ? i d = ? a v gs = ? v * 0.14 0.2 ? i d = -0.7 a v gs = - 2.5 v * forward transfer admittance |y fs | 4.0 6 s i d = ? a v ds = - 10 v * input capacitance ciss 840 pf v ds = - 10 v output capacitance coss 515 pf v gs = 0 reverse transfer capacitance crss 145 pf f = 1 mhz turn?n delay time t d( on) 20 ns v gs = ? v, i d = ? a rise time t r 115 ns v dd = ?0 v turn?ff delay time t d( off) 100 ns fall time t f 120 ns body?rain diode forward v df ?.8 v i f = ?.5 a, v gs = 0 voltage body?rain diode reverse trr 65 ns i f = ?.5 a, v gs = 0 recovery time dif / dt = 20a / ? * pulse test HAT1005F
2.0 1.5 1.0 0.5 0 50 100 150 200 test condition : when using the glass epoxy board (40 x 40 x 1.6 mm) channel dissipation pch (w) ambient temperature ta (?) power vs. temperature derating ?0 ?6 ?2 ? ? 0 drain to source voltage v (v) ds drain current i (a) d typical output characteristics ? ? ? ? ?0 ?0 v ? v ? v ? v ? v ?.5 v ? v ?.5 v ? v v = ?.5 v gs pulse test ?0 ?6 ?2 ? ? 0 gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics ? ? ? ? ? v = ?0 v pulse test ds tc = ?5 ? 75 ? 25 ? drain to source voltage v (v) ds drain current i (a) d maximum safe operation area ?.1 ?00 ?0 ? ?.1 ?.01 ?.3 ? ? ?0 ?0 ?00 ?0 ? ?.3 ?.03 operation in this area is limited by r ds(on) 10 ? 100 ? 1 ms dc operation ** ta = 25 ? 1 shot pulse pw = 10 ms ** when using the glass epoxy board (40 x 40 x 1.6 mm) HAT1005F
?.5 ?.4 ?.3 ?.2 ?.1 0 gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage ? ? ? ? ?0 pulse test ?.5 a d i = ? a ? a 0.25 0.20 0.15 0.10 0.05 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance ? static drain to source on state resistance vs. temperature pulse test ? v v = ?.5 v gs i = ? a d ? a ?0 v ? , ? a ? , ? a forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current drain current i (a) d 50 20 10 2 5 1 0.5 ?.2 ?.5 ? ? ? ?0 ?0 tc = ?5 ? 75 ? 25 ? v = ?0 v pulse test ds drain current i (a) d drain to source on state resistance r ( ) ? ds(on) static drain to source on state resistance vs. drain current 1 0.2 0.5 0.1 0.02 0.05 0.01 pulse test ? v v = ?.5 v gs ?0 v ?.2 ?.5 ? ? ? ?0 ?0 HAT1005F
reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time 1000 200 500 100 20 50 10 ?.2 ?.5 ? ? ? ?0 ?0 di / dt = 20 a / ? v = 0, ta = 25 ? gs 0 ?0 ?0 ?0 ?0 0 gate charge qg (nc) drain to source voltage v (v) ds 0 ? ? ?2 ?6 ?0 ?0 gate to source voltage v (v) gs dynamic input characteristics ds v gs v d i = ?.5 a v = ? v ?0 v ?5 v dd dd v = ?5 v ?0 v ? v 8 16 24 32 40 drain current i (a) d switching time t (ns) switching characteristics 1000 200 500 100 20 50 10 ?.2 ?.5 ? ? ? ?0 ?0 t f r t d(off) t d(on) t v = ? v, v = ?0 v pw = 3 ?, duty < 1 % gs dd 0 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage 10000 3000 1000 300 100 30 10 ?0 ?0 ?0 ?0 ?0 ciss coss crss v = 0 f = 1 mhz gs HAT1005F
?0 ?6 ?2 ? ? 0 source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage ?.4 ?.8 ?.2 ?.6 ?.0 pulse test 0, 5 v v = ? v gs + 0.05 ?0.02 0.10 ?0.10 2.00 max 2.03 max 4.55 max 0.20 0.75 max 0.40 + 0.10 ?0.05 0.60 + 0.25 ?0.18 0.12 0 ?10 m 8 5 1 4 5.25 max 6.8 max 1.27 0.1 hitachi code eiaj jedec fp?d sc?27?a ?sop? package dimensions unit : mm HAT1005F
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